Single crystal CVD synthetic diamond material

Abstract

A single crystal CVD synthetic diamond material comprising: a total as-grown nitrogen concentration equal to or greater than 5 ppm, and a uniform distribution of defects, wherein said uniform distribution of defects is defined by one or more of the following characteristics: (i) the total nitrogen concentration possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value; (ii) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb); (iii) a variation in Raman intensity such that there is a low point-to-point variation wherein the ratio of Raman peak areas between regions of low Raman intensity and high Raman intensity is <1.25x; (iv) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb; (v) a single substitutional nitrogen defect (Ns) concentration equal to or greater than 5 ppm; (vi) a variation in red luminescence intensity, as defined by a standard deviation divided by a mean value, is less than 15%; (vii) a mean standard deviation in neutral single substitutional nitrogen concentration of less than 80%; and (Viii) a colour intensity as measured using a histogram from a microscopy image with a mean gray value of greater than 50. A method of fabrication of the diamond material is also disclosed.

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Patent Citations (2)

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    GB-1476313-AJune 10, 1977Nat Res DevGrowth of synthetic diamonds
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